Optoelectronic Study of Solution Grown Sb2Se3 Thin Films

Abstract

This study explores the optoelectronic properties of Sb₂Se₃ thin films grown via chemical bath deposition (CBD), selenosulphate solution prepared by refluxing method, alongside antimony potassium tartrate solution complexed with triethanolamine and ammonia, diluted to 100 mL. Clean glass substrates underwent room-temperature deposition for 4 hours in darkness to ensure controlled nucleation, followed by rinsing with deionized water, drying hot air using dryer. Optical and electrical properties of chemically deposited Sb₂Se₃ thin films were systematically investigated to assess their suitability. Transmittance analysis in the wavelength range of 500–1000 nm reveals moderate transparency (~35–40%) in the near-infrared region, while a sharp decrease in transmittance below ~800 nm indicates a distinct absorption edge. Correspondingly, the absorbance spectrum exhibits strong absorption in the visible region (500–700 nm), confirming efficient photon harvesting with absorption coefficients exceeding 10⁴–10⁵ cm⁻¹.